STPSC10H065 datasheet, diode equivalent, STMicroelectronics

Features and benefits

* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* High forward surge capability
* Insulated pack.

Application

* Switch mode power supply
* PFC
* DCDC converters
* LLC topologies
* Boost diode Product status ST.

Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky con.

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