STPSC10H12 diode equivalent, power schottky silicon carbide diode.
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating from -40 °C to 175 °C
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this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance .
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode st.
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