STPSC10H12G2Y-TR diode equivalent, silicon carbide power schottky diode.
* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* PPAP capabl.
* On board charger (OBC)
* DC/DC
* PFC
Description
This 10 A, 1200 V SiC diode is an ultra-high performance .
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky .
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