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STPSC10H12G2Y-TR Datasheet, STMicroelectronics

STPSC10H12G2Y-TR diode equivalent, silicon carbide power schottky diode.

STPSC10H12G2Y-TR Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 372.40KB)

STPSC10H12G2Y-TR Datasheet
STPSC10H12G2Y-TR
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 372.40KB)

STPSC10H12G2Y-TR Datasheet

Features and benefits


* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* PPAP capabl.

Application


* On board charger (OBC)
* DC/DC
* PFC Description This 10 A, 1200 V SiC diode is an ultra-high performance .

Description

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky .

Image gallery

STPSC10H12G2Y-TR Page 1 STPSC10H12G2Y-TR Page 2 STPSC10H12G2Y-TR Page 3

TAGS

STPSC10H12G2Y-TR
silicon
carbide
power
Schottky
diode
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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