STPSC10H12G2Y-TR datasheet, diode equivalent, STMicroelectronics

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Features and benefits

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* PPAP capabl.

Application

* On board charger (OBC)
* DC/DC
* PFC Description This 10 A, 1200 V SiC diode is an ultra-high performance .

Description

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky .

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