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STPSC10H065DLF Datasheet, STMicroelectronics

STPSC10H065DLF diode equivalent, power schottky silicon carbide diode.

STPSC10H065DLF Avg. rating / M : 1.0 rating-11

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STPSC10H065DLF Datasheet

Features and benefits


* Less than 1 mm height package
* High creepage package
* No or negligible reverse recovery
* Temperature independent switching behavior
* High forwar.

Application


* Boost PFC
* Bootstrap diode
* LLC clamping function
* High frequency inverter applications Description.

Description

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky c.

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TAGS

STPSC10H065DLF
power
Schottky
silicon
carbide
diode
STMicroelectronics

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