STPSC10H065BY-TR datasheet, diode equivalent, STMicroelectronics

Features and benefits

* AEC-Q101 qualified
* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* Recommended to PFC applic.

Application

* PPAP capable
* ECOPACK compliant component Applications
* On board charger (OBC)
* Solar boost PFC

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no.

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