STPSC10H065BY-TR diode equivalent, schottky silicon carbide diode.
* AEC-Q101 qualified
* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* Recommended to PFC applic.
* PPAP capable
* ECOPACK compliant component
Applications
* On board charger (OBC)
* Solar boost PFC
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no.
Image gallery
TAGS