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STPSC10H065BY-TR Datasheet, STMicroelectronics

STPSC10H065BY-TR diode equivalent, schottky silicon carbide diode.

STPSC10H065BY-TR Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 343.28KB)

STPSC10H065BY-TR Datasheet

Features and benefits


* AEC-Q101 qualified
* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* Recommended to PFC applic.

Application


* PPAP capable
* ECOPACK compliant component Applications
* On board charger (OBC)
* Solar boost PFC

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no.

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TAGS

STPSC10H065BY-TR
Schottky
silicon
carbide
diode
STMicroelectronics

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