STPSC10H065G2 diode equivalent, high surge silicon carbide power schottky diode.
* No or negligible reverse recovery
* Switching behavior independent of temperature
* High forward surge capability
* Operating Tj from -40 °C to 175 °C <.
* Telecom power supply
* Server power supply
* Switch mode power supply
* DCDC converters
* LLC topo.
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky con.
Image gallery
TAGS
Download