STPSC1006D
STPSC1006D is 600 V power Schottky silicon carbide diode manufactured by STMicroelectronics.
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600 V power Schottky silicon carbide diode
Features
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- No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
Description
The Si C diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST Si C diodes will boost the performance of PFC operations in hard switching conditions. Table 1.
TO-220AC STPSC1006D
Device summary
IF(AV) VRRM Tj (max) QC (typ) 10 A 600 V 175 °C 12 n C
May 2008
Rev 1
1/7
.st. 7
Characteristics
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Characteristics
Table 2.
Symbol VRRM IF(RMS) IF IFSM IFRM Tstg Tj
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Parameter Repetitive peak reverse voltage RMS forward current Continuous forward current Surge non repetitive forward current Repetitive peak forward current Storage temperature range Operating junction temperature TC = 115 °C tp = 10 ms sinusoidal δ = 0.1, TC = 110 °C, Tj = 150 °C Value 600 18 10 40 40 -55 to +175 -40 to +175 Unit
V A A A A
°C °C
Table 3.
Symbol Rth(j-c)
Thermal resistance
Parameter Junction to case Value 2 Unit °C/W
Table 4.
Symbol IR (1) VF (2)
Static electrical characteristics (per...
