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STPSC1006D Datasheet

600 V power Schottky silicon carbide diode

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STPSC1006D
600 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A
K
TO-220AC
STPSC1006D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
10 A
600 V
175 °C
12 nC
May 2008
Rev 1
1/7
www.st.com
7


STMicroelectronics Electronic Components Datasheet

STPSC1006D Datasheet

600 V power Schottky silicon carbide diode

No Preview Available !

Characteristics
1 Characteristics
www.SDTaPtaSShCe1e0t40U6.Dcom
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF
IFSM
Repetitive peak reverse voltage
RMS forward current
Continuous forward current
Surge non repetitive forward current
IFRM Repetitive peak forward current
Tstg Storage temperature range
Tj Operating junction temperature
TC = 115 °C
tp = 10 ms sinusoidal
δ = 0.1, TC = 110 °C,
Tj = 150 °C
600 V
18 A
10 A
40 A
40 A
-55 to +175 °C
-40 to +175 °C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
2 °C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ Max.
IR (1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 150 °C
VF (2) Forward voltage drop
Tj = 25 °C
Tj = 150 °C IF = 10 A
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.09 x IF2(RMS)
30 300
210 1500
1.4 1.7
1.6 2.1
Unit
µA
V
Table 5. Other parameters
Symbol
Parameter
Test conditions
Typ Unit
Qc
Total capacitive charge
Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs
Tj = 150 °C
C Total capacitance
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
12
650
nC
pF
2/7


Part Number STPSC1006D
Description 600 V power Schottky silicon carbide diode
Maker STMicroelectronics
Total Page 7 Pages
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