STPSC10065 diode equivalent, schottky silicon carbide diode.
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Dedicated to PFC applications
* High forward surge capability
* .
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* D²PAK HV creepage distance (anode to .
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky co.
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