STPSC30G12-Y datasheet, diode equivalent, STMicroelectronics

STPSC30G12-Y diode equivalent, 30a power schottky high surge silicon carbide diode.

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 488.24KB)

Features and benefits

* AEC-Q101 qualified and PPAP capable
* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage peripher.

Application

* Boost PFC
* HEV/EV OBC (On board battery chargers)
* EV Charging station Description The SiC diode, availa.

Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1.

Image gallery