STPSC30G12
STPSC30G12 is 30A power Schottky high surge silicon carbide diode manufactured by STMicroelectronics.
Features
- None or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -55 °C to 175 °C
- Avalanche energy rated
- ECOPACK2 pliant ponent
Applications
- Solar inverter
- Boost PFC
- Air conditioning equipment
- UPS power supply
- Tele / Server power equipment
- HEV/EV OBC (On board battery chargers)
- EV Charging station
Description
The Si C diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST Si C diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
Product status link STPSC30G12
Product summary
IF(AV)
30 A
VRRM
1200 V
Tj (max.)
175 °C
VF (typ.)
1.35 V
DS14115
- Rev 1
- November 2022 For further information contact your local STMicroelectronics sales office.
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Characteristics
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
EAS(1) Single pulse avalanche energy, starting Tj = 25 °C, IAS = 7.7 A, L = 10 m H
IF(RMS) Forward rms...
