STPSC30G12 diode equivalent, 30a power schottky high surge silicon carbide diode.
* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating Tj from -55 °C to 175 °C.
* Solar inverter
* Boost PFC
* Air conditioning equipment
* UPS power supply
* Telecom / Server powe.
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1.
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