* Less than 1 mm height package
* High creepage package
* No or negligible reverse recovery
* Temperature independent switching behavior
* High forwar.

* Boost PFC
* Bootstrap diode
* LLC clamping function
* High frequency inverter applications Description.

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky c.

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