STGWA40S120DF3 igbt equivalent, trench gate field-stop igbt.
* 10 µs of short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 40 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resist.
* Industrial drives
* UPS
* Solar
* Welding
*
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Description
This device is an IGBT developed .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive .
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