STGWA40H60DLFB igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ.)
@ IC .
* Induction heating
* Microwave oven
* Resonant converters
G (1)
Sc12850_no_tab
E (3)
Description
This d.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.
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