72 72ORQJOHDGV Figure 1.Internal schematic diagram
* 10 µs of short-circuit withstand time
* VCE(sat) = 1.85 V (typ.) @ IC = 40 A
* Tight pa.

* Industrial drives
* UPS
* Solar
* Welding &RU7$% Description * ( This device is an .

* ( This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter s.

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