STGWA40HP65FB2 Datasheet, STMicroelectronics

* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A
* Co-packaged protection diode
* Minimized tail current
* Tight.

* Welding
* Power factor correction E(3) G1E3C2D Product status link STGWA40HP65FB2 Product summary Order c.

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, .

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