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STGWA40H120F2 - 1200V 40A IGBT

Download the STGWA40H120F2 datasheet PDF. This datasheet also covers the STGW40H120F2 variant, as both devices belong to the same 1200v 40a igbt family and are provided as variant models within a single manufacturer datasheet.

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 40 A.
  • 5 μs minimum short-circuit withstand time at TJ = 150 °C.
  • Safe paralleling.
  • Low thermal resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW40H120F2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW40H120F2, STGWA40H120F2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 3 2 1 TO-247 3 12 TO-247 long leads G(1) C(2, TAB) E(3) G1C2TE3 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 40 A • 5 μs minimum short-circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
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