STGWA40H65DFB - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGWA40H65DFB
Manufacturer	STMicroelectronics
File Size	526.47 KB
Description	IGBT
Datasheet	STGWA40H65DFB Datasheet
Additional preview pages of the STGWA40H65DFB datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Apr 13, 2020 |