STGWA40H65DFB Datasheet | STMicroelectronics

Features - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A - Tight parameter distribution - Safe paralleling - Positive VCE(sat) temperature coefficient - Low thermal resistance - Very fast soft recovery antiparallel diode Applications - Photovoltaic inverters - High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWA40H65DFB Product summary Order code Marking G40H65DFB Package TO-247 long leads Packing Tube DS11680 - Rev 2 - June 2019 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP (1) Pulsed collector current Gate-emitter voltage...