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STGWA40H65DFB - IGBT

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STMicroelectronics

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STGWA40H65DFB IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGWA40H65DFB

Datasheet Details

Part number	STGWA40H65DFB
Manufacturer	STMicroelectronics
File Size	526.47 KB
Description	IGBT
Datasheet	STGWA40H65DFB Datasheet
Additional preview pages of the STGWA40H65DFB datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Apr 13, 2020 |