Order code SCTWA60N12G2-4AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body .

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description This s.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts