SCTWA40N120G2AG Datasheet, STMicroelectronics

Order code SCTWA40N120G2AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 long leads D(2, TAB) G(1)
* AEC-Q101 qualified
* Very fast and robust intrinsic body.

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description S(3) .

S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performan.

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