SCTWA40N120G2AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCTWA40N120G2AG
VDS 1200 V
RDS(on) max. 105 mΩ
ID 33 A
HiP247 long leads
D(2, TAB)
G(1)
* AEC-Q101 qualified
* Very fast and robust intrinsic body.
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC)
Description
S(3)
.
S(3)
This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performan.
Image gallery
TAGS