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SCTWA35N65G2V4AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

  • Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB).
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Low capacitances.
  • Source sensing pin for increased efficiency.
  • Very high operating junction temperature capability (TJ = 200 °C) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4.

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Datasheet Details

Part number SCTWA35N65G2V4AG
Manufacturer STMicroelectronics
File Size 193.65 KB
Description Automotive-grade silicon carbide Power MOSFET
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SCTWA35N65G2V4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package Features Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitances • Source sensing pin for increased efficiency • Very high operating junction temperature capability (TJ = 200 °C) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
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