SCTWA60N120G2-4 - Silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency.

STMicroelectronics

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Datasheet Details

Part number	SCTWA60N120G2-4
Manufacturer	STMicroelectronics
File Size	192.70 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTWA60N120G2-4 Datasheet
Additional preview pages of the SCTWA60N120G2-4 datasheet.

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Full PDF Text Transcription

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SCTWA60N120G2-4 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Features Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Published: Jun 26, 2023 |