SCTWA40N120G2V - Silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

STMicroelectronics

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Datasheet Details

Part number	SCTWA40N120G2V
Manufacturer	STMicroelectronics
File Size	223.65 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTWA40N120G2V Datasheet
Additional preview pages of the SCTWA40N120G2V datasheet.

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SCTWA40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Published: Jun 26, 2023 |