SCTWA60N12G2-4AG Datasheet PDF (Automotive-grade silicon carbide Power MOSFET) | Download STMicroelectronics SCTWA60N12G2-4AG

SCTWA60N12G2-4AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTWA60N12G2-4AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4.

Datasheet Details

Part number	SCTWA60N12G2-4AG
Manufacturer	STMicroelectronics
File Size	195.58 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA60N12G2-4AG Datasheet
Additional preview pages of the SCTWA60N12G2-4AG datasheet.

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Full PDF Text Transcription

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SCTWA60N12G2-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package Features Order code SCTWA60N12G2-4AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Published: Feb 18, 2023 |