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SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

  • Order code SCTWA35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 long leads.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Low capacitance D(2, TAB) G(1) S(3).

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SCTWA35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package Features Order code SCTWA35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 long leads • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance D(2, TAB) G(1) S(3) Applications • Switching mode power supply • EV chargers • DC-DC converters AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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