SCTWA35N65G2V4AG Datasheet, STMicroelectronics

Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body d.

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description This s.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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