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SCTWA60N120G2AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

  • Order code SCTWA60N120G2AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247 long leads D(2, TAB) G(1) S(3) AM01475v1_noZen.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C).

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SCTWA60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package Features Order code SCTWA60N120G2AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247 long leads D(2, TAB) G(1) S(3) AM01475v1_noZen • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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