SCTWA60N120G2AG Datasheet, STMicroelectronics

Order code SCTWA60N120G2AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247 long leads D(2, TAB) G(1) S(3) AM01475v1_noZen
* AEC-Q101 qualified
* Very fast an.

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description This s.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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