SCTWA60N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTWA60N120G2AG
Manufacturer	STMicroelectronics ↗
File Size	237.75 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA60N120G2AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Order code SCTWA60N120G2AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247 long leads D(2, TAB) G(1) S(3) AM01475v1_noZen.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Mar 1, 2023 |