SCTWA60N120G2-4 mosfet equivalent, silicon carbide power mosfet.
Order code
VDS
RDS(on) max.
ID
SCTWA60N120G2-4
1200 V
52 mΩ
60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capaci.
* Switching mode power supply
* DC-DC converters
* Industrial motor control
Description
This silicon carbid.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
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