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SCTWA60N120G2-4 Datasheet, STMicroelectronics

SCTWA60N120G2-4 mosfet equivalent, silicon carbide power mosfet.

SCTWA60N120G2-4 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 192.70KB)

SCTWA60N120G2-4 Datasheet
SCTWA60N120G2-4 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 192.70KB)

SCTWA60N120G2-4 Datasheet

Features and benefits

Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capaci.

Application


* Switching mode power supply
* DC-DC converters
* Industrial motor control Description This silicon carbid.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

Image gallery

SCTWA60N120G2-4 Page 1 SCTWA60N120G2-4 Page 2 SCTWA60N120G2-4 Page 3

TAGS

SCTWA60N120G2-4
Silicon
carbide
Power
MOSFET
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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