logo

SCTWA40N12G24AG Datasheet, STMicroelectronics

SCTWA40N12G24AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTWA40N12G24AG Avg. rating / M : 1.0 rating-11

datasheet Download

SCTWA40N12G24AG Datasheet

Features and benefits

Order code SCTWA40N12G24AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body .

Application


* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description This s.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

Image gallery

SCTWA40N12G24AG Page 1 SCTWA40N12G24AG Page 2 SCTWA40N12G24AG Page 3

TAGS

SCTWA40N12G24AG
Automotive-grade
silicon
carbide
Power
MOSFET
SCTWA40N120G2AG
SCTWA40N120G2V
SCTWA40N120G2V-4
STMicroelectronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts