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SW20N60 - N-channel Power MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness MOSFET.
  • RDS(ON) (Max 0.3Ω)@VGS=10V.
  • Gate Charge (Max 80 nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-3P BVDSS : 600V ID : 20A.
  • RDS(ON) : 0.3ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW20N60
Manufacturer SAMWIN
File Size 815.83 KB
Description N-channel Power MOSFET
Datasheet download datasheet SW20N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW20N60 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P BVDSS : 600V ID : 20A* RDS(ON) : 0.3ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge.