RQJ0603LGDQA switching equivalent, silicon p channel mos fet power switching.
* Low on-resistance RDS(on) = 158 mΩ typ (VGS =
–10 V, ID =
–0.9 A)
* Low drive current
* High speed switching
* 4.5 V gat.
for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.
Image gallery
TAGS
Download