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RQJ0602EGDQA Datasheet, Renesas

RQJ0602EGDQA fet equivalent, silicon p-channel mos fet.

RQJ0602EGDQA Avg. rating / M : 1.0 rating-11

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RQJ0602EGDQA Datasheet

Features and benefits


* Low on-resistance RDS(on) = 490 mΩ typ (VGS =
  –10 V, ID =
  –0.55 A)
* Low drive current
* High speed switching
* 4.5 V ga.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RQJ0602EGDQA
Silicon
P-Channel
MOS
FET
RQJ0602EGDQS
RQJ0601DGDQS
RQJ0603LGDQA
Renesas

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