RQJ0602EGDQS fet equivalent, silicon p-channel mos fet.
* Low on-resistance RDS(on) = 485 mΩ typ (VGS =
–10 V, ID =
–0.75 A)
* Low drive current
* High speed switching
* 4.5 V ga.
//www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, di.
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