logo

RQJ0201UGDQA Datasheet, Renesas

RQJ0201UGDQA fet equivalent, silicon p-channel mos fet.

RQJ0201UGDQA Avg. rating / M : 1.0 rating-12

datasheet Download

RQJ0201UGDQA Datasheet

Features and benefits


* Low on-resistance RDS(on) = 53 mΩ typ (VGS =
  –4.5 V, ID =
  –1.8 A)
* Low drive current
* High speed switching
* 2.5 V gat.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

RQJ0201UGDQA Page 1 RQJ0201UGDQA Page 2 RQJ0201UGDQA Page 3

TAGS

RQJ0201UGDQA
Silicon
P-Channel
MOS
FET
RQJ0202VGDQA
RQJ0203WGDQA
RQJ0204XGDQA
Renesas

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts