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RQJ0203WGDQA Datasheet, Renesas

RQJ0203WGDQA fet equivalent, silicon p-channel mos fet.

RQJ0203WGDQA Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 123.25KB)

RQJ0203WGDQA Datasheet

Features and benefits


* Low on-resistance RDS(on) = 142 mΩ typ (VGS =
  –4.5 V, ID =
  –1.1 A)
* Low drive current
* High speed switching
* 2.5 V ga.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

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TAGS

RQJ0203WGDQA
Silicon
P-Channel
MOS
FET
Renesas

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