RQJ0301HGDQS fet equivalent, silicon p-channel mos fet.
* Low on-resistance RDS(on) = 38 m Ω typ (VGS =
–10 V, ID =
–2.6 A)
* Low drive current
* High speed switching
* 4.5 V gat.
ogy Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. .
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