Datasheet4U Logo Datasheet4U.com

RQJ0301HGDQS - Silicon P-Channel MOS FET

Features

  • Low on-resistance RDS(on) = 38 m Ω typ (VGS =.
  • 10 V, ID =.
  • 2.6 A).
  • Low drive current.
  • High speed switching.
  • 4.5 V gate drive Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RQJ0202VGDQATL-E P-Channel 20V MOSFET VBsemi

Other Datasheets by Renesas

Part Number Description
RQJ0302NGDQA Silicon P-Channel MOS FET
RQJ0303PGDQA Silicon P Channel MOS FET
RQJ0304DQDQA Silicon P-Channel MOS FET
RQJ0304DQDQS Silicon P-Channel MOS FET
RQJ0305EQDQA Silicon P-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RQJ0301HGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “HG”. REJ03G1265-0300 Rev.3.00 Jun 05, 2006 2, 4 D 1. Gate 1 G 2. Drain 3. Source 4. Drain S 3 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (pulse) Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 1 s, duty cycle ≤ 1% 2.
Published: |