logo

RQJ0302NGDQA Datasheet, Renesas

RQJ0302NGDQA fet equivalent, silicon p-channel mos fet.

RQJ0302NGDQA Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 119.12KB)

RQJ0302NGDQA Datasheet

Features and benefits


* Low on-resistance RDS(on) = 138 mΩ typ (VGS =
  –10 V, ID =
  –1.1 A)
* Low drive current
* High speed switching
* 4.5 V gat.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

RQJ0302NGDQA Page 1 RQJ0302NGDQA Page 2 RQJ0302NGDQA Page 3

TAGS

RQJ0302NGDQA
Silicon
P-Channel
MOS
FET
Renesas

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts