RQJ0601DGDQS fet equivalent, silicon p-channel mos fet.
* Low on-resistance RDS(on) = 124 mΩ typ (VGS =
–10 V, ID =
–1.4 A)
* Low drive current
* High speed switching
* 4.5 V gat.
ntion to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semi.
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