logo

RQJ0603LGDQA Datasheet, Renesas

RQJ0603LGDQA fet equivalent, silicon p-channel mos fet.

RQJ0603LGDQA Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 125.25KB)

RQJ0603LGDQA Datasheet

Features and benefits


* Low on-resistance RDS(on) = 158 mΩ typ (VGS =
  –10 V, ID =
  –0.9 A)
* Low drive current
* High speed switching
* 4.5 V gat.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

RQJ0603LGDQA Page 1 RQJ0603LGDQA Page 2 RQJ0603LGDQA Page 3

TAGS

RQJ0603LGDQA
Silicon
P-Channel
MOS
FET
Renesas

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts