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PNMDP60V22 Datasheet Preview

PNMDP60V22 Datasheet

N-Channel MOSFET

No Preview Available !

Description
The PNMDP60V22 uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. It can be used in a wide
variety of applications.
MOSFET Product Summary
VDS(V)
60
RDS(on)(mΩ)
40@ VGS = 10V
ID(A)
22
Feature
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Applications
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Pulsed Drain Current
TA=25
TA=100
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy 5)
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Case 2)
Rev.06
1
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ,TSTG
RθJC
PNMDP60V22
N-Channel MOSFET
Schematic diagram
Marking (Top View)
TO-252-2L (Top View)
Value
60
±20
22
15
60
45
0.3
85
-55 to 175
3.3
Units
V
V
A
A
W
W/
mJ
/W
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Prisemi

PNMDP60V22 Datasheet Preview

PNMDP60V22 Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel MOSFET
PNMDP60V22
Electrical characteristics per line@25(unless otherwise specified)
Parameter
Symbol
Conditions
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics3)
BVDSS
IDSS
IGSS
VGS = 0V,ID = 250μA
VDS = 60V,VGS = 0V
VGS = ±20V,VDS = 0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics4)
VGS(th)
RDS(ON)
gFS
VDS = VGS,ID = 250μA
VGS = 10V,ID = 20A
VDS = 5V,ID = 5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics4)
Clss
Coss
Crss
VDS = 15V,VGS = 0V,
F = 1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
td(on)
tr
td(off)
tr
Qg
Qgs
Qgd
VDD = 30V,ID = 2A,
VGS = 10V,RG = 3Ω
VDS = 30V,ID = 10A,
VGS = 10V
Diode Forward Voltage3)
VSD VGS = 0V,IS = 2A
Diode Forward Current2)
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25,IF = 20A,
Qrr di/dt = 100A/μs3)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
Rev.06
2
Min. Typ. Max. Units
60 - - V
--
1 μA
- - ±100 nA
1.2 1.6 2.5
V
- 32 40 mΩ
11 - - S
- 590 -
- 70 -
- 64 -
pF
pF
pF
-6-
- 6.1 -
- 17 -
-3-
- 25.3 -
- 4.7 -
- 6.1 -
ns
ns
ns
ns
nC
nC
nC
- - 1.2 V
- - 20 A
- 29.5 -
nS
- 50 - nC
www.prisemi.com


Part Number PNMDP60V22
Description N-Channel MOSFET
Maker Prisemi
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PNMDP60V22 Datasheet PDF






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