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PNM3FD20V1E - N-Channel MOSFET

Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PNM3FD20V1E
Manufacturer Prisemi
File Size 277.54 KB
Description N-Channel MOSFET
Datasheet download datasheet PNM3FD20V1E Datasheet

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 200@ VGS=4.5V 250@ VGS=2.5V ±1 310@ VGS=1.8V PNM3FD20V1E N-Channel MOSFET G(1) D(3) S(2) Top View Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Total power dissipation Junction and Storage Temperature Range Symbol VDS VGS ID IDP PD TJ ，TSTG Value 20 ±10 ±1 ±4 300 -55 to +150 Units V V A mW ℃ Thermal resistance Parameter Channel to ambient Symbol Rth(ch-a) Limits 420 Units ℃/W Rev.06.17 1 www.prisemi.
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