PNM3FD20V1E
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
200@ VGS=4.5V
250@ VGS=2.5V
±1
310@ VGS=1.8V
PNM3FD20V1E N-Channel MOSFET
G(1) D(3)
S(2)
Top View
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Pulsed
Total power dissipation
Junction and Storage Temperature Range
Symbol
VDS VGS ID IDP PD TJ ，TSTG
Value
20 ±10 ±1 ±4 300 -55 to +150
Units
A m W ℃
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
Limits
Units
℃/W
Rev.06.17...
