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PNM3FD20V1ELN - N-Channel MOSFET

Description

The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge.

This device is suitable for power management and high efficiency applications at high switching frequencies applications.

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Datasheet Details

Part number PNM3FD20V1ELN
Manufacturer Prisemi
File Size 387.62 KB
Description N-Channel MOSFET
Datasheet download datasheet PNM3FD20V1ELN Datasheet

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Full PDF Text Transcription

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Description The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. VDS(V) 20 ESD MOSFET Product Summary RDS(on)(mΩ)(Typ) 145 @ VGS = 4.5V 173 @ VGS = 2.5V HBM Pass 3.5kV ID(A) 1.
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