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PNM6N30V12 - N-Channel MOSFET

Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PNM6N30V12
Manufacturer Prisemi
File Size 309.58 KB
Description N-Channel MOSFET
Datasheet download datasheet PNM6N30V12 Datasheet

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 30 MOSFET Product Summary RDS(on)(mΩ) ID(A) <15 @ VGS=10V 12 <20 @ VGS=4.5V Application  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply PNM6N30V12 N-Channel MOSFET Pin 1 Drain DDG Source DDS DFN2*2-6L（Bottom View） （D） 1 （D） 2 （G） 3 6 （D） 5 （D） 4 （S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous Drain Current- Continuous (TC=70℃) Pulse Drain Current Total Power Dissipation Operating and Storage Junction Temperature Range(1) Symbol VDS VGS ID ID IDM PD ( TA=25℃) PD ( TA=125℃) TJ,TSTG Internal structure Value 30 ±20 12 9 48 1.4 1.
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