PNM6N30V15H
Description
The PNM6N30V15H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications..
MOSFET Product Summary
VDS(V) 30
RDS(on)(mΩ) 8 @ VGS = 10V 10 @ VGS = 4.5V
ID(A) 15
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
Absolute maximum rating@25℃
PNM6N30V15H N-Channel MOSFET
Bottom View
Circuit Diagram
YYWW
Pin1 Marking (Top View)
Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) Total Power Dissipation Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD RθJA
TJ,TSTG
Value 30
±20 15 60 2.4 52
-55~+150
Units V V A A W
℃/W ℃
Rev.06.10
.prisemi.
N-Channel MOSFET
Electrical...
