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PNM6N30V15H - N-Channel MOSFET

Description

The PNM6N30V15H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications..

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Datasheet Details

Part number PNM6N30V15H
Manufacturer Prisemi
File Size 412.92 KB
Description N-Channel MOSFET
Datasheet download datasheet PNM6N30V15H Datasheet

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Full PDF Text Transcription

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Description The PNM6N30V15H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.. MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 8 @ VGS = 10V 10 @ VGS = 4.
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