PNM523T201E0
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.2@ VGS=4.5V
0.25@ VGS=2.5V
0.31@ VGS=1.8V
PNM523T201E0 N-Channel MOSFET
D（3）
G（1）
S（2）
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃) Total power dissipation Channel temperature Range of storage temperature
Continuous Pulsed
Thermal resistance
Parameter
Channel to ambient
Symbol
VDS VGS ID IDP PD TCH TSTG
Value
20 ±10
1 4 140 150 -55 to 150
Units
A m W ℃ ℃
Symbol
Rth(ch-a)
Limits
Units
℃/W
Rev.06.10
.prisemi.
N-Channel MOSFET
Electrical characteristics per line@25℃( unless otherwise...
