PNM523T60V02
Description
PNM523T60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
PNM523T60V02 N-Channel MOSFET
D（3）
VDS(V) 60
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
2.0@ VGS=10V
0.5 to 1.3
ID(A) 0.18
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
VDSS IDSS IGSS VGS(th)
RDS(ON)
ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.05A VGS=10V, ID =0.5A
DYNAMIC PARAMETERS
CISS CDSS CRSS
VGS=0V, VDS =25V, f=1MHz
SWITCHING PARAMETERS td(on) td(off)
VDS=30V, VGS =10V, RG=25Ω, RL=150Ω
ID =0.2A
Min. Typ. Max. Units
- -V
- - 0.5...
