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CM1200HC-50H Datasheet Preview

CM1200HC-50H Datasheet

IGBT Module

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM1200HC-50H
q IC ................................................................ 1200A
q VCES ....................................................... 2500V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
C
CCC
C CC
G
E
EEE
CM E
CEG
E
3 - M4 NUTS
79.4
20.25
41.25
61.5
61.5
13
E CIRCUIT DIAGRAM
8 - φ7MOUNTING HOLES
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Oct. 2002




Powerex Power Semiconductors

CM1200HC-50H Datasheet Preview

CM1200HC-50H Datasheet

IGBT Module

No Preview Available !

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC Collector current
ICM
IE (Note 2) Emitter current
IEM(Note 2)
PC (Note 3) Maximum collector dissipation
Tj Junction temperature
Tstg Storage temperature
Viso Isolation voltage
— Mounting torque
— Mass
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
2500
±20
1200
2400
1200
2400
15600
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Cies
Coes
Cres
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
IC = 1200A, VGE = 15V
(Note 4)
QG Total gate charge
VCC = 1250V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 1250V, IC = 1200A
tr
td (off)
tf
Turn-on rise time
Turn-off delay time
Turn-off fall time
VGE1 = VGE2 = 15V
RG = 1.6
Resistive load switching operation
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
IE = 1200A, VGE = 0V
IE = 1200A,
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
(Note 1)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
6.0
2.80
3.15
180
13.5
6.0
8.1
2.50
350
0.008
Max
15
7.5
0.5
3.64
1.60
2.00
2.50
1.00
3.25
1.20
0.010
0.020
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Oct 2002


Part Number CM1200HC-50H
Description IGBT Module
Maker Powerex Power Semiconductors
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CM1200HC-50H Datasheet PDF






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