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CM1200HCB-34N
HIGH POWER SWITHCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM2400HCB-34N
IC ·························································· 1200 A VCES ···················································· 1700 V 1-element in pack Insulated type CSTBTTM / Soft recovery diode AlSiC baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Publication Date : December 2015
(HVM-1053-B)
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< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor
CM1200HCB-34N Datasheet
