Datasheet Summary
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HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
AR LIMIN
MITSUBISHI HVIGBT MODULES
CM1200HC-66H q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack q AISiC base plate.
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57...