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Mitsubishi Electric

CM1200HC-66H Datasheet Preview

CM1200HC-66H Datasheet

IGBT Module

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PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HC-66H
q IC ................................................................ 1200A
q VCES ....................................................... 3300V
q Insulated Type
q 1-element in a pack
q AISiC base plate.
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
C
CCC
C CC
G
E
EEE
CM E
CEG
E
3 - M4 NUTS
20.25
79.4
41.25
61.5
61.5
13
E CIRCUIT DIAGRAM
8 - φ7MOUNTING HOLES
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001




Mitsubishi Electric

CM1200HC-66H Datasheet Preview

CM1200HC-66H Datasheet

IGBT Module

No Preview Available !

PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM(Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
3300
±20
1200
2400
1200
2400
12500
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
(Note 4)
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 1650V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 1650V, IC = 1200A
tr Turn-on rise time
VGE1 = VGE2 = 15V
td (off)
tf
Turn-off delay time
Turn-off fall time
RG = 1.6
Resistive load switching operation
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
IE = 1200A, VGE = 0V
IE = 1200A,
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
(Note 1)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
6.0
3.30
3.60
180
18.0
5.4
8.6
2.80
400
0.008
Max
15
7.5
0.5
4.29
1.60
2.00
2.50
1.00
3.64
1.40
0.010
0.020
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001


Part Number CM1200HC-66H
Description IGBT Module
Maker Mitsubishi Electric
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CM1200HC-66H Datasheet PDF






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