HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C, IGBT part
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
1700
±20
1200
2400
1200
2400
12500
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
VCE(sat)
Cies
Coes
Cres
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
VCE = 10V
VGE = 0V
(Note 4)
—
—
—
—
—
—
QG Total gate charge
VCC = 850V, IC = 1200A, VGE = 15V
—
td (on)
Turn-on delay time
VCC = 850V, IC = 1200A
—
tr
td (off)
tf
Turn-on rise time
Turn-off delay time
Turn-off fall time
VGE1 = VGE2 = 15V
RG = 1.6Ω
Resistive load switching operation
—
—
—
VEC (Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
IE = 1200A, VGE = 0V
IE = 1200A
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
—
—
—
—
—
—
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
—
5.5
—
2.75
3.30
140
20.0
7.6
6.6
—
—
—
—
2.40
—
200
—
—
0.008
Max
24
6.5
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.010
0.032
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
