CM1200HC-50H
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MITSUBISHI HVIGBT MODULES
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HC-50H q IC 1200A q VCES 2500V q Insulated Type q 1-element in a Pack q AISi C Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.1
190 ±0.5 171 ±0.1 57 ±0.1
57 ±0.1
- M8 NUTS C
- 0.2
+0.1
124 ±0.1 140 ±0.5 40 ±0.2
CM C
CIRCUIT DIAGRAM
20.25 ±0.2 41.25 ±0.3 3
- M4 NUTS 79.4 ±0.3 61.5 ±0.3 screwing depth min. 7.7
- φ7 ±0.1 MOUNTING HOLES screwing depth min. 16.5
61.5 ±0.3 13 ±0.2
15 ±0.2 40 ±0.3 5.2 ±0.2
5 ±0.15
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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